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| IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII II II III I I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II II IIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II III I II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data NPN Silicon Power Darlington Transistor SEMICONDUCTOR TECHNICAL DATA MOTOROLA * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 400 Vdc (Min) * 175 Watts Capability at 50 Volts * Automotive Functional Tests The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 2 Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Base Current Collector Current -- Continuous -- Peak (1) Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage (RBE = 27 ) Collector-Emitter Voltage Characteristic Rating Symbol Symbol TJ, Tstg VCBO VCEO VEBO VCER RJC PD TL IC IB v 10%. - 65 to + 200 MJ10012 BASE 275 175 100 1.0 1.0 Max 600 550 400 2.0 8.0 10 15 - 55 to + 150 MJH10012 1k 118 47.5 1.05 0.95 275 COLLECTOR 30 EMITTER Watts Watts W/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc Vdc _C _C MJ10012 MJH10012 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS CASE 340D-01 TO-218 TYPE MJH10012 Order this document by MJ10012/D CASE 1-07 TO-204AA (TO-3) MJ10012 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJ10012 MJH10012 (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. FUNCTIONAL TESTS SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Pulsed Energy Test (See Figure 12) Second Breakdown Collector Current with Base-Forward Biased Fall Time Storage Time Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Diode Forward Voltage (IF = 10 Adc) Base Emitter On Voltage (IC = 10 Adc, VCE = 6.0 Vdc) Base Emitter Saturation Voltage (IC = 6.0 Adc, IB = 0.6 Adc) (IC = 10 Adc, IB = 2.0 Adc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) (IC = 6.0 Adc, IB = 0.6 Adc) (IC = 10 Adc, IB = 2.0 Adc) DC Current Gain (IC = 3.0 Adc, VCE = 6 0 Vdc) (IC = 6.0 Adc, VCE = 6.0 Vdc) (IC = 10 Adc, VCE = 6.0 Vdc) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (Rated VCBO, IE = 0) Collector Cutoff Current (Rated VCER, RBE = 27 Ohms) Collector-Emitter Sustaining Voltage (Figure 1) (IC = 200 mAdc, RBE = 27 Ohms, Vclamp = Rated VCER) Collector-Emitter Sustaining Voltage (Figure 1) (IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO) 2 10 V * Adjust t1 such that IC reaches 200 mA at VCE = Vclamp 0V 5 ms Figure 1. Sustaining Voltage Test Circuit t1 220 * VCC = 20 Vdc 100 2N3713 VCEO Characteristic (VCC = 12 Vdc, IC = 6.0 Adc, IB1 = IB2 = 0.3 Adc) Figure 2 1N4933 L = 10 mH 27 VCER VCEO(sus) = 400 Vdc VCER(sus) = 425 Vdc Vclamp Vclamp 0 225 s VCEO(sus) VCER(sus) En VCE(sat) VBE(sat) VBE(on) Symbol Motorola Bipolar Power Transistor Device Data IC2L/2 ICBO IEBO ICER IS/B Cob hFE Vf ts tf 51 Figure 2. Switching Times Test Circuit 25 s 1N3947 Min 300 100 20 425 400 -- -- -- -- -- -- -- -- -- -- -- -- -- -- [ 12 V [ 12 V See Figure 10 Typ 165 550 350 150 -4V 5.2 75 2.0 -- -- -- -- -- -- -- -- -- -- -- -- VCC 14 V ADJUST UNTIL IC = 6 A T.U.T. [ -- 2000 -- Max 180 350 3.5 2.8 2.5 3.0 15 2.0 2.5 1.0 1.0 15 15 40 -- -- 2 Eo mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc Vdc Vdc mJ pF s s -- -- MJ10012 MJH10012 2000 1000 hFE, DC CURRENT GAIN 700 500 300 200 30C 100 70 50 30 20 VCE = 3 Vdc VCE = 6 Vdc 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 25C TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3 TJ = 25C 2.5 2 10 A 1.5 IC = 0.5 A 1 3 6 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 IB, BASE CURRENT (AMP) 0.5 1 2 Figure 3. DC Current Gain Figure 4. Collector Saturation Region VCE(sat) COLLECTOR-EMITTER SATURATION , VOLTAGE (VOLTS) 2.2 IC/IB = 5 TJ = 150C 25C 1 - 30C VBE, BASE-EMITTER VOLTAGE (VOLTS) 2.8 VBE(sat) @ IC/IB = 5 VBE(on) @ VCE = 6 V 1.8 2.4 1.4 2 TJ = - 30C 1.6 25C 25C 150C 0.6 1.2 0.2 0.1 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMP) 5 7 10 0.8 0.1 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Voltage IC, COLLECTOR CURRENT ( A) 10 7 5 3 t, TIME ( s) 2 1 0.7 0.5 0.3 0.2 0.1 104 ts 103 102 101 75C VCE = 250 V TJ = 150C tf IC = ICES TJ = 25C IC/IB = 20 VCE = 12 Vdc 100 25C FORWARD + 0.2 + 0.4 + 0.6 + 0.8 0.2 0.3 2 3 5 7 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 10 20 10-1 REVERSE - 0.2 0 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 7. Turn-Off Switching Time Figure 8. Collector Cutoff Region Motorola Bipolar Power Transistor Device Data 3 MJ10012 MJH10012 1 0.7 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 2 P(pk) RJC(t) = r(t) RJC RJC = C/W MAX D CURVES APPLY FOR POWER t1 PULSE TRAIN SHOWN t2 READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) DUTY CYCLE, D = t1/t2 5 10 t, TIME (ms) 20 50 100 200 500 1,000 2,000 D = 0.5 0.2 Figure 9. Thermal Response 50 IC, COLLECTOR CURRENT (AMP) 20 10 5 2 1 0.2 0.1 MJ10012 5.0 ms MJH10012 1.0 ms 100 s dc TC = 25C BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 5 10 20 30 50 70 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 0.01 0.005 Figure 10. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TC = 25_C, T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING 80 VCC = 12 Vdc 1.5 10 mH STANCORE C2688 VZ = 400 V 10 Vdc 0 Vdc t1 60 THERMAL DERATING 5 ms 220 20 2N5881 1N4933 T.U.T. 27 0.3 F 20 MJH10012 MJ10012 t1 to be selected such that IC reaches 6 Adc before switch-off. NOTE: "Usage Test," Figure 12 specifies energy handling capabilities in an automotive ignition circuit. 0 0 40 160 80 120 TC, CASE TEMPERATURE (C) 200 Figure 11. Power Derating Figure 12. Usage Test Circuit 4 Motorola Bipolar Power Transistor Device Data MJ10012 MJH10012 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 INCHES MIN MAX 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078 U S K L 1 2 4 A 3 DIM A B C D E G H J K L Q S U V D V G J H STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 340D-01 SOT 93, TO-218 TYPE ISSUE A Motorola Bipolar Power Transistor Device Data 5 MJ10012 MJH10012 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJ10012/D* MJ10012/D |
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